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You are here:Home >> Product >> Discrete Semiconductor Products >> Transistors - Bipolar (BJT) - Arrays

HBDM60V600W-7

Part Number: HBDM60V600W-7<

Manufacturer: Diodes Incorporated<

Description: TRANS NPN/PNP 65V/60V SOT363<

Data sheet: HBDM60V600W-7

Specifications

Part Status	Active
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	500mA, 600mA
Voltage - Collector Emitter Breakdown (Max)	65V, 60V
Vce Saturation (Max) @ Ib, Ic	400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max	200mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SOT-363
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.