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You are here:Home >> Product >> Discrete Semiconductor Products >> Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN1507(TE85L,F)

Part Number: RN1507(TE85L,F)<

Manufacturer: Toshiba Semiconductor and Storage<

Description: TRANS 2NPN PREBIAS 0.3W SMV<

Data sheet: RN1507(TE85L,F)

Specifications

Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Supplier Device Package	SMV
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.