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EMB3T2R

Part Number
EMB3T2R<
Manufacturer
Rohm Semiconductor<
Description
TRANS 2PNP PREBIAS 0.15W EMT6<
Data sheet
EMB3T2R

Specifications

Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 5mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.