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TPCC8002-H(TE12L,Q

Part Number
TPCC8002-H(TE12L,Q<
Manufacturer
Toshiba Semiconductor and Storage<
Description
MOSFET N-CH 30V 22A 8TSON<
Data sheet
TPCC8002-H(TE12L,Q

Specifications

Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs 8.3 mOhm @ 11A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON
Package / Case 8-VDFN Exposed Pad
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.