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CSD23202W10

Part Number
CSD23202W10<
Manufacturer
Texas Instruments<
Description
MOSFET P-CH 12V 2.2A 4DSBGA<
Data sheet
CSD23202W10

Specifications

Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 512pF @ 6V
Vgs (Max) -6V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 53 mOhm @ 500mA, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.