You are here:Home >> Product >> Discrete Semiconductor Products >> Transistors - FETs, MOSFETs - Single

DMN3029LFG-7

Part Number
DMN3029LFG-7<
Manufacturer
Diodes Incorporated<
Description
MOSFET N-CH 30V 5.3A PWRDI333-8<
Data sheet
DMN3029LFG-7

Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 15V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 18.6 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerWDFN
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.