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2N7002ET1G

Part Number
2N7002ET1G<
Manufacturer
ON Semiconductor<
Description
MOSFET N-CH 60V 260MA SOT-23<
Data sheet
2N7002ET1G

Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 26.7pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300mW (Tj)
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 240mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.